Effect of stoichometry on the radiation response of InxGa1-xAs solar cells

Authors
Messenger, SR Walters, RJ Summers, GP Hoffman, RH Stan, MA
Citation
Sr. Messenger et al., Effect of stoichometry on the radiation response of InxGa1-xAs solar cells, PROG PHOTOV, 8(3), 2000, pp. 345-348
Citations number
8
Categorie Soggetti
Environmental Engineering & Energy
Journal title
PROGRESS IN PHOTOVOLTAICS
ISSN journal
10627995 → ACNP
Volume
8
Issue
3
Year of publication
2000
Pages
345 - 348
Database
ISI
SICI code
1062-7995(200005/06)8:3<345:EOSOTR>2.0.ZU;2-D
Abstract
The response of InxGa1-xAs solar cells of three different stoichimetries to proton irradiation is presented. In particular, the response of the In0.22 Ga0.78As (band gap of 1.1 eV) cell recently developed by Essential Research Inc., which has attained record high efficiencies, is studied. The respons e of the ERI cell is shown to be Equivalent to that of a standard GaAs cell up to high irradiation levels. Overall, however, adding In to the GaAs lat tice is found to generally reduce the cell radiation tolerance. Published i n 2000 by John Wiley & Sons, Ltd.