IMPROVED HEAT-TREATMENT FOR WAFER DIRECT BONDING BETWEEN SEMICONDUCTORS AND MAGNETIC GARNETS

Authors
YOKOI H MIZUMOTO T MARU K NAITO Y
Citation
H. Yokoi et al., IMPROVED HEAT-TREATMENT FOR WAFER DIRECT BONDING BETWEEN SEMICONDUCTORS AND MAGNETIC GARNETS, JPN J A P 1, 36(5A), 1997, pp. 2784-2787
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
36
Issue
5A
Year of publication
1997
Pages
2784 - 2787
Database
ISI
SICI code
Abstract
The optical propagation loss of rib waveguides fabricated on magnetic garnet films increased upon annealing in H-2 ambient during wafer dire ct bonding. The heat treatment in wafer direct bonding between InP and Gd3Ga5O12 was investigated with the aim of circumventing the loss inc rease. The bonding was achieved by heat treatment in H-2 ambient at te mperatures of less than or equal to 330 degrees C of in N-2 ambient.