CESIUM-INDUCED RECONSTRUCTION ON SI(113)3X2 SURFACE STUDIED BY LOW-ENERGY-ELECTRON DIFFRACTION AND X-RAY PHOTOELECTRON-SPECTROSCOPY

We have investigated Cs-induced reconstruction on the Si(113)3 x 2 sur face using low energy electron diffraction (LEED) and X-ray photoelect ron spectroscopy (XPS). For Cs deposition at room temperature; the (3 x 1) LEED pattern was observed for a wide Cs coverage range. At high s ubstrate temperatures, the (3 x 1); (1 x 5 + 2x) and (2 x 2) phases we re observed with increasing Cs deposition time. The relative Cs satura tion coverages of (3 x 1)-Cs at RT and (2 x 2)-Cs at 300 degrees C wer e measured from Cs 3d/Si 2p core level XPS intensity ratios. The resul ts are summarized in a phase diagram as a function of tile Cs depositi on time.