Conduction and dielectric behaviour of SiC nano-sized materials

Citation
A. Kassiba et al., Conduction and dielectric behaviour of SiC nano-sized materials, SOL ST COMM, 115(7), 2000, pp. 389-393
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
115
Issue
7
Year of publication
2000
Pages
389 - 393
Database
ISI
SICI code
0038-1098(2000)115:7<389:CADBOS>2.0.ZU;2-L
Abstract
SiC nanopowders have been investigated by means of dielectric relaxation sp ectroscopy over the frequency range 0.1 Hz-1 GHz and sample temperature ran ge 150-570 K. The relaxation processes and the electrical conductivity are analysed using the Havriliak-Negami dielectric response. The electrical and dielectric properties are interpreted taking into account the material com position, grain morphology and the nature of the interfaces. We have shown that the dielectric and electrical behaviour are influenced by interfacial polarisation in powders with high specific surfaces. (C) 2000 Elsevier Scie nce Ltd. All rights reserved.