The nitrides of the reactive transition metals of the 4th group (Ti, Zr, Hf
) exhibit a number of technologically interesting properties such as high m
elting points, high hardness, chemical inertness, and decorative appearence
. They can be formed by ion beam-assisted deposition at substrates held at
room temperature. The nitrides were deposited on silicon by electron beam e
vaporation of the respective metal under nitrogen ion bombardment with medi
um to high ion energies (10-30 keV). X-Ray photo electron spectrometry show
ed that the metals tend to incoporate large amounts of oxygen. This can be
reduced by intense ion irradiation. By X-ray diffraction measurements phase
formation was determined as a function of the ion-to-atom arrival ratio. T
he grains show a preferential (100) crystal orientation. The formation of t
his texture depends on the ion-to-atom arrival ratio and on the metal atomi
c mass. The films grow in columns which are composed of small crystallites.
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