Ion beam-assisted deposition of nitrides of the 4th group of transition metals

Citation
W. Ensinger et al., Ion beam-assisted deposition of nitrides of the 4th group of transition metals, SURF COAT, 128, 2000, pp. 81-84
Citations number
10
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE & COATINGS TECHNOLOGY
ISSN journal
02578972 → ACNP
Volume
128
Year of publication
2000
Pages
81 - 84
Database
ISI
SICI code
0257-8972(200006/07)128:<81:IBDONO>2.0.ZU;2-D
Abstract
The nitrides of the reactive transition metals of the 4th group (Ti, Zr, Hf ) exhibit a number of technologically interesting properties such as high m elting points, high hardness, chemical inertness, and decorative appearence . They can be formed by ion beam-assisted deposition at substrates held at room temperature. The nitrides were deposited on silicon by electron beam e vaporation of the respective metal under nitrogen ion bombardment with medi um to high ion energies (10-30 keV). X-Ray photo electron spectrometry show ed that the metals tend to incoporate large amounts of oxygen. This can be reduced by intense ion irradiation. By X-ray diffraction measurements phase formation was determined as a function of the ion-to-atom arrival ratio. T he grains show a preferential (100) crystal orientation. The formation of t his texture depends on the ion-to-atom arrival ratio and on the metal atomi c mass. The films grow in columns which are composed of small crystallites. (C) 2000 Elsevier Science S.A. All rights reserved.