C-SiC-Si gradient films formed on silicon by ion beam assisted deposition at room temperature

Ion beam assisted deposition (IBAD) of carbon under medium energy (35 keV) Ar ion bombardment onto a silicon target results in the formation of silico n carbide. The formation of a-C-SiC-Si gradient films is dependent on the i on/atom arrival ratio (I/A). All films are deposited at room temperature. T he gradient layers formed are examined for their composition using RBS. Dep ending on the I/A ratios, mixed interfaces of different widths, where silic on carbide exists, are formed. The Si-C bonding in the mixed region is prov en by XPS. The film formed on top of some samples contains amorphous carbon regions as shown by Raman spectroscopy. The surface of the layers grown is rather smooth with a roughness of several nanometres. (C) 2000 Elsevier Sc ience S.A. All rights reserved.