The luminescence of C-N thin films formed by nitrogen ion implantation on a diamond film

Citation
Ga. Cheng et al., The luminescence of C-N thin films formed by nitrogen ion implantation on a diamond film, SURF COAT, 128, 2000, pp. 320-323
Citations number
9
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE & COATINGS TECHNOLOGY
ISSN journal
02578972 → ACNP
Volume
128
Year of publication
2000
Pages
320 - 323
Database
ISI
SICI code
0257-8972(200006/07)128:<320:TLOCTF>2.0.ZU;2-U
Abstract
In this presentation, C-N thin films synthesized by nitrogen-ion implantati on on a diamond film are investigated. The structures of the implanted film and unimplanted films were determined by the use of an X-ray diffractomete r (XRD) and scanning electron microscopy (SEM). It was found that a beta-C3 N4 compound thin film was formed in the implanted layer. By means of the sp ectrophotometer, it indicates that the intensive blue-violet luminescence, excited at 249 nm, is obtained at room temperature, and the up-conversion l uminescence in the blue-violet area, excited at 631 nm, is also observed. ( C) 2000 Elsevier Science S.A. All rights reserved.