The results of Rutherford backscattering analysis, Auger electron spectrosc
opy, transmission electron microscopy and X-ray diffraction analysis of the
surface aluminium layer after carbon implantation are presented in this wo
rk. The energy of implanted ions was 20 keV, the implantation dose varied i
n the range of 0.4-4.0 x 10(17) ions/cm(2). The growth of carbon implantati
on dose resulted in an increase of carbon concentration over the stoichiome
tric level. Phase composition analysis showed that carbon implantation led
to the formation of a Al4C3 compound. The possible mechanism of carbide for
mation based on ion-induced crystallisation was proposed. The behaviour of
stress induced by carbon implantation in the aluminium lattice was also dis
cussed. (C) 2000 Elsevier Science S.A. All rights reserved.