High-energy metal ion implantation into titanium dioxide films

Titanium dioxide (TiO2) films prepared by a sol-gel method were irradiated with 0.5 MeV V, Ti and 1.8 MeV Au ions and subsequently annealed at approxi mately 480 degrees C. After the implantation and thermal annealing, the mic rostructure and the optical properties of the TiO2 films were studied by Ru therford backscattering spectrometry (RBS), optical absorption and glancing angle X-ray diffraction measurements. It was found that the distribution o f the implanted metal was slightly changed after annealing. The absorption edge of the films also slightly shifted toward the longer wavelength side. The films were composed of anatase and rutile phases. The anatase phase was reduced by ion implantation. (C) 2000 Elsevier Science S.A. All rights res erved.