Strong ultra-violet and visible frequency up-conversion fluorescence spectr
oscopy in neodymium-ion implantation single crystalline silicon at the exci
tation wavelengths of 625, 650, 675 and 700 nm, was experimentally investig
ated. The PL intensity increased with the increase in the excitation wavele
ngth and ion fluence. The photoluminescence excitation (PLE) spectrum in th
e wavelength range of 500-770 mm was also studied. For 700-nm pumping, a me
chanism of two-photon absorption and radiation transition process was propo
sed. (C) 2000 Elsevier Science S.A. AU rights reserved.