XPS, LEED and STM study of thin oxide films formed on Cr(110)

Citation
V. Maurice et al., XPS, LEED and STM study of thin oxide films formed on Cr(110), SURF SCI, 458(1-3), 2000, pp. 195-215
Citations number
56
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
458
Issue
1-3
Year of publication
2000
Pages
195 - 215
Database
ISI
SICI code
0039-6028(20000620)458:1-3<195:XLASSO>2.0.ZU;2-I
Abstract
The growth, thickness, composition and structure of chromium oxide thin fil ms formed by exposing Cr(110) single-crystal surfaces to gaseous oxygen at 300 and 625 K have been investigated by XPS, LEED and STM measurements. The oxide films formed at the two temperatures are significantly different. At 300 K, a granular and non-crystalline oxide is formed, which grows with a constant similar to Cr2O3 stoichiometry up to a limiting thickness of 0.9 n m. The film is hydrated with a water content of 10-20%, which decreases upo n annealing. Nuclei of oxide with a lateral dimension of similar to 0.7 nm and a height of similar to 0.2 nm have been observed in the nucleation stag e. These nuclei grow predominantly laterally and coalesce to fully cover th e substrate surface prior to the thickening stage. At 625 K, a first stage of oxygen adsorption is observed in which stripes 1.5-2.3 nm wide and paral lel to the Cr[001] direction are observed after annealing in UHV. They corr espond to narrow segments of mixed and close-packed planes of O atoms and i ons having a geometry and orientation similar to those of the anions planes in the oxide crystals. Rows of adatoms, possibly Cr3+ ions of oxide nuclei , are observed above the stripes. Thickening at 625 K leads to the formatio n of a non-crystalline oxide, which grows up to a limiting thickness of 4.6 nm. The presence of Cr3+ vacancies related to a significant cation transpo rt through the oxide film in this temperature regime is detected. After UHV annealing at 825 or 925 K, the film is anhydrous. The Cr3+ vacancies are a ccumulated at the metal/oxide film interface. The film crystallizes in epit axy with the substrate in the following orientation: alpha-Cr2O3(0001)paral lel to Cr(110) and alpha-Cr2O3[21 (3) over bar 0]parallel to Cr[001]. The S TM measurements of the unit cell of the alpha-Cr2O3(0001) surface are consi stent with a termination by a cation plane and show three tunneling sites a ssigned to the various possible locations of the Cr3+ ions at room temperat ure due to surface diffusion. (C) 2000 Elsevier Science B.V. All rights res erved.