INFLUENCE OF INTERFACES ON CRYSTAL-GROWTH OF SI IN SIO2 A-SI/SIO2 LAYERED STRUCTURES/

The crystal growth of Si in SiO2/a-Si/SiO2 layered structures is exami ned by high resolution transmission electron microscopy. In a thin a-S i layer (10 nm), crystal growth halts with the crystallite size roughl y equal to the layer thickness. In a thick layer (50 nm), crystal grow th continues beyond the layer thickness. An expression for this halt i n growth is derived from the free energy change. The halt in growth of Si crystallites suggests that the a-Si/SiO2 interface and the a-Si/c- Si interface are more stable than the c-Si/SiO2 interface.