GROWTH OF INN AT HIGH-TEMPERATURE BY HALIDE VAPOR-PHASE EPITAXY

Epitaxial growth of InN at high temperature was tried on a GaN buffer/ (0001)sapphire substrate by halide vapor phase epitaxy using InCl3 and NH3 sources. An InN epitaxial layer was obtained reproducibly at a gr owth temperature as high as 750 degrees C. The growth rate of hexagona l InN was 0.2 mu m/h at 750 degrees C. The X-ray full width at half-ma ximum (FWHM) value of the obtained InN showed a minimum (24.7 min) at the growth temperature of 700 degrees C. It was found that a high inpu t partial pressure of InCl3 nas necessary for the growth of InN at hig h temperature.