GAN THIN-FILM GROWTH ON LIGAO2 SUBSTRATE WITH A MULTIDOMAIN STRUCTURE

We investigated the differences in the growth morphologies of hexagona l GaN thin films on {001}LiGaO2 substrates with a multi-domain structu re. GaN thin alms grown on one domain, where the etching rate was high using an aqueous solution of nitric acid (H2O:HNO3=1:1), peeled off. On the other hand, GaN thin films with good crystallinity. grew epitax ially on the other domain, where the etching rate was low. These resul ts strongly suggest that the peeling-off of GaN film from a {001}LiGaO 2 substrate must be closely related to the differences in the chemical stability and/or polarity of the two domains.