INALAS ALASSB TYPE-11 MULTIPLE-QUANTUM-WELL LAYERS LATTICE-MATCHED TOINP GROWN BY MOLECULAR-BEAM-EPITAXY/

In0.52Al0.48As/AlAs0.56Sb0.44 type II multiple quantum well (MQW) laye rs lattice-matched to InP substrates were grown by molecular beam epit axy (MBE). High quality InAlAs/AlAsSb MQW layers were obtained by cont rolling As/Sb beams precisely and optimizing the V/III ratio during gr owth. Below-gap Light emission at 0.90-0.97 mu m was observed at 77 K, which arises from the recombination between electrons in the InAlAs l ayers and holes in the AlAsSb layers across the type II heterointerfac e. The valence band discontinuity Delta E-v is estimated to be 0.28 eV from the InAlAs well width dependence of the emission energy.