EPITAXIAL-GROWTH OF BATIO3 OPTICAL THIN-FILMS BY PULSED KRF LASER DEPOSITION AND IN-SITU PULSED-LASER ANNEALING

Citation
A. Ito et al., EPITAXIAL-GROWTH OF BATIO3 OPTICAL THIN-FILMS BY PULSED KRF LASER DEPOSITION AND IN-SITU PULSED-LASER ANNEALING, JPN J A P 2, 36(6B), 1997, pp. 805-807
Citations number
11
Categorie Soggetti
Physics, Applied
Volume
36
Issue
6B
Year of publication
1997
Pages
805 - 807
Database
ISI
SICI code
Abstract
A simple, hybrid process of pulsed KrF laser deposition (PLD) with in situ pulsed laser annealing has been demonstrated. By this method, epi taxial BaTiO3 optical thin (relatively thick) films with a thickness o f up to 2 mu m were successfully fabricated on a MgO substrate for the first time. By in situ pulsed KrF excimer laser irradiation of the su rface of the growing film, i.e., in situ laser annealing, good smoothn ess of the aim surface and annealing of the film were achieved, allowi ng the thick film fabrication. The substrate temperature for the fabri cation of epitaxial BaTiO3 films was also reduced to 650 degrees C by incorporating the in situ pulsed laser annealing. Refractive indices o f the films were measured to be about 2.30-2.12, which is higher than for films without in situ laser annealing.