A. Ito et al., EPITAXIAL-GROWTH OF BATIO3 OPTICAL THIN-FILMS BY PULSED KRF LASER DEPOSITION AND IN-SITU PULSED-LASER ANNEALING, JPN J A P 2, 36(6B), 1997, pp. 805-807
A simple, hybrid process of pulsed KrF laser deposition (PLD) with in
situ pulsed laser annealing has been demonstrated. By this method, epi
taxial BaTiO3 optical thin (relatively thick) films with a thickness o
f up to 2 mu m were successfully fabricated on a MgO substrate for the
first time. By in situ pulsed KrF excimer laser irradiation of the su
rface of the growing film, i.e., in situ laser annealing, good smoothn
ess of the aim surface and annealing of the film were achieved, allowi
ng the thick film fabrication. The substrate temperature for the fabri
cation of epitaxial BaTiO3 films was also reduced to 650 degrees C by
incorporating the in situ pulsed laser annealing. Refractive indices o
f the films were measured to be about 2.30-2.12, which is higher than
for films without in situ laser annealing.