T. Takami et S. Ino, FORMATION OF SI(111)-6X6-AU STRUCTURE WITHOUT USING A VACUUM EVAPORATION TECHNIQUE OBSERVED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, JPN J A P 2, 36(6B), 1997, pp. 815-817
We have demonstrated the formation of the Si(111)-6x6-Au surface struc
ture without using a Vacuum evaporation technique. Au multiply-twinned
particle micelles, comprised of a Au multiply-twinned particle and me
rcaptopropionic acid, in water were put on a thermally oxidized Si(111
) substrate. After drying and introduction into a vacuum chamber, the
Si(111) substrate was flashed at 900 degrees C. Then the 6x6 surface s
tructure was observed by reflection high-energy electron diffraction.
A novel technique for metal deposition at a coverage of several monola
yers or at sub-monolayer coverage can be predicted from the result.