FORMATION OF SI(111)-6X6-AU STRUCTURE WITHOUT USING A VACUUM EVAPORATION TECHNIQUE OBSERVED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

Authors
Citation
T. Takami et S. Ino, FORMATION OF SI(111)-6X6-AU STRUCTURE WITHOUT USING A VACUUM EVAPORATION TECHNIQUE OBSERVED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, JPN J A P 2, 36(6B), 1997, pp. 815-817
Citations number
22
Categorie Soggetti
Physics, Applied
Volume
36
Issue
6B
Year of publication
1997
Pages
815 - 817
Database
ISI
SICI code
Abstract
We have demonstrated the formation of the Si(111)-6x6-Au surface struc ture without using a Vacuum evaporation technique. Au multiply-twinned particle micelles, comprised of a Au multiply-twinned particle and me rcaptopropionic acid, in water were put on a thermally oxidized Si(111 ) substrate. After drying and introduction into a vacuum chamber, the Si(111) substrate was flashed at 900 degrees C. Then the 6x6 surface s tructure was observed by reflection high-energy electron diffraction. A novel technique for metal deposition at a coverage of several monola yers or at sub-monolayer coverage can be predicted from the result.