FIELD-EMISSION FROM AN ION-IRRADIATED PHOTORESIST

The held emission from Ar ion irradiated photoresist material is demon strated. A photoresist of novolac-type positive-tone is used as the te st material. The electrical resistivity of the photoresist film is fou nd to decrease after Ar ion implantation at doses on the order of 10(1 6) cm(-2). Raman spectroscopy shows that carbon-carbon bonds such as t he graphite bond are produced due to ion bombardment. For the field em ission, a pyramid-like structure is prepared using oxygen-plasma etchi ng and Ar ions are implanted to the pyramid-like structured photoresis t. Electron emission of the order of 10(-6) A is observed for implante d samples, while no emission is detected from unimplanted samples.