The ultrasonic spray pyrolysis (USP) technique has been employed to deposit
tungsten oxide (WO3) thin films. The films were prepared by spraying 0.02
M ammonium metatungstate solution onto amorphous glass substrates kept at 2
50 degrees C. These alms were further annealed at 400 degrees C ibr differe
nt time periods (1-5 h) in air. The films were characterized for structural
, electrical and opto-electronic properties. X-ray diffraction technique wa
s used to determine the crystallinity of the WO3 films and identify the pha
ses that form as a function of annealing time. The as-prepared WO3 films we
re amorphous and crystallize when annealed at 400 degrees C in air for 2 or
more hours. From TEM, the grain size and lattice plane spacing are estimat
ed. The films were further characterized by using time resolved microwave c
onductivity (TRMC) technique and decay time of the photogenerated charge ca
rriers is calculated to be about 154 ns. The concentration and mobility of
charge carriers are estimated from thermoelectric power (TEP) measurements.
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