Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water

Atomic layer growth of titanium dioxide from titanium ethoxide and water wa s studied. Real-time quartz crystal microbalance measurements revealed that adsorption of titanium ethoxide is a self-limited process at substrate tem peratures 100-250 degrees C. A relatively small amount of precursor ligands was released during titanium ethoxide adsorption while most of them was ex changed during the following water pulse. At temperatures 100-150 degrees C , incomplete reaction between surface intermediates and water hindered the film growth. Nevertheless, the deposition rate reached 0.06 nm per cycle at optimized precursor doses. At substrate temperatures above 250 degrees C, the thermal decomposition of titanium ethoxide markedly influenced the grow th process. The growth rate increased with the reactor temperature and tita nium ethoxide pulse time but it insignificantly depended on the titanium et hoxide pressure. Therefore reproducible deposition of thin films with unifo rm thickness was still possible at substrate temperatures up to 350 degrees C. The films grown at 100-150 degrees C were amorphous while those grown a t 180 degrees C and higher substrate temperature, contained polycrystalline anatase. The refractive index of polycrystalline films reached 2.5 at the wavelength 580 nm. (C) 2000 Elsevier Science S.A. All rights reserved.