Infrared study of adsorption and thermal decomposition of Si2H6 on Si(100)

Citation
M. Shinohara et al., Infrared study of adsorption and thermal decomposition of Si2H6 on Si(100), THIN SOL FI, 369(1-2), 2000, pp. 16-20
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
369
Issue
1-2
Year of publication
2000
Pages
16 - 20
Database
ISI
SICI code
0040-6090(20000703)369:1-2<16:ISOAAT>2.0.ZU;2-1
Abstract
We have investigated the adsorption and thermal decomposition of disilane o n Si(100) (2 x 1) using infrared absorption spectroscopy. We demonstrate th at at room temperature, disilane dissociatively adsorbs onto the surface wi th the dimer bond unbroken, to produce mono-, di-, and tri-hydride species. At low coverages, the disilane molecule adsorbs on the surface without bre aking the Si-Si bond of the molecule. Thermal annealing following room-temp erature adsorption of disilane produces a hydrogen-terminated adatom dimer (HSi-SiH) and an isolated monohydride species. We suggest that these hydrid e species are generated through the rupture of the substrate dimer bonds. H ydrogen desorption from the isolated monohydride occurs at much lower tempe rature than that from the adatom dimer. (C) 2000 Elsevier Science S.A. All rights reserved.