Ge thin film growth on Si(111) surface using hydrogen surfactant

We have investigated the atomic hydrogen (H)-surfactant mediated growth of Ge on Si(111) surface, using coaxial impact-collision ion scattering spectr oscopy (CAICISS), time-of-flight elastic recoil detection analysis (TOF-ERD A) and scanning electron microscopy (SEM). It has been found that the Ge th in film on the Si(111)1 x 1-H surface is flattened by the H-surfactant, whi lst on the Si(111)7 x 7 surface the flatness does not change in spite of su pplying H. These results indicate that the flatness of the Ge thin film is strongly influenced by the structure of the Si(lll) substrate surface at th e initial stage of Ge thin film growth. (C) 2000 Elsevier Science S.A. All rights reserved.