Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition

The formation of nanometer-scale silicon dots on ultrathin SiO2 layers has been studied by controlling the early stages of low-pressure chemical vapor deposition (LPCVD) of a monosilane gas. It has been suggested that the the rmal dissociation of surface Si-O bonds plays a role in creation of nucleat ion sites on as-grown SiO2 and that surface Si-OH bonds formed by a dilute HF treatment or pure water immersion act as nucleation sites during LPCVD. By spatially controlling OH-termination on the SiO2 surface before LPCVD, t he selective growth of Si dots has been demonstrated. (C) 2000 Elsevier Sci ence S.A. All rights reserved.