A novel measurement method of segregating adlayers in MBE

A novel method for measurement of the adatom density of segregating dopant atoms is suggested. The determination of the surface density is completely based on post growth concentration profile measurements. The dependancies o f the surface segregation ratio on different growth parameters can be extra cted. The method was tested on the segregation of boron in silicon (100) mo lecular beam epitaxy. The strong decay of segregation with decreasing tempe rature was confirmed and quantified for a selected set of parameters. The b oron segregation was shown to be also strongly dependant on doping concentr ation. (C) 2000 Elsevier Science S.A. All rights reserved.