A novel structure in Ge/Si epilayers grown at low temperature

Authors
Cheng, HH Chia, CT Markov, VA Guo, XJ Chen, CC Peng, YH Kuan, CH
Citation
Hh. Cheng et al., A novel structure in Ge/Si epilayers grown at low temperature, THIN SOL FI, 369(1-2), 2000, pp. 182-184
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
369
Issue
1-2
Year of publication
2000
Pages
182 - 184
Database
ISI
SICI code
0040-6090(20000703)369:1-2<182:ANSIGE>2.0.ZU;2-7
Abstract
We report the growth of Ge/Si strained layer at low temperature. A new grow th mode is observed where 'groove islands' are formed beneath the Ge wettin g layer. The new structure exhibits an Ge concentration dependent profile a long the growth direction. This effect is tentatively attributed to the str ess-driven intermixing of Ge/Si during the growth. (C) 2000 Elsevier Scienc e S.A. All rights reserved.