Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structureusing SIMOX technology

The fabrication of a 20 nm strained-Si on a 360 nm relaxed-SiGe layer struc ture using SIMOX technology was successfully demonstrated for the first tim e. The thin relaxed-SiGe layer on SiO2 was obtained by the direct implantat ion of oxygen into the thick SiGe layer, and by annealing. It was found tha t hydrogen termination produced by HF treatment allows successful regrowth of strained-Si layer on the thin relaxed-SiGe layer by ultra-high vacuum ch emical vapor deposition (UHV-CVD). Structure analyses such as secondary ion mass spectroscopy (SIMS), Rutherford back-scattering spectroscopy (RBS) an alysis, and cross-sectional transmitting electron microscopic (TEM) reveale d the perfection of the layer structure of Si/SiGe/SiO2. The fully strained -Si on the relaxed-SiGe layers was also confirmed by Raman spectroscopy. It was revealed that the combination of the SIMOX process and the regrowth on the SiGe layer provides an advanced layer structure including this straine d-Si for future novel devices. (C) 2000 Elsevier Science S.A. All rights re served.