Growth of beta-FeSi2 and FeSi layers by reactive deposition using Sb-related intermetallic compounds

beta-FeSi2 and FeSi layers were grown on Si substrates by deposition of Sb- related intermetallic compounds and simultaneous reaction with Si substrate s. Higher quality epitaxial beta-FeSi2 layers with smooth interfaces were o btained on the Si(111) substrates at the substrate temperatures ranging fro m 650 to 700 degrees C in comparison to the layers grown by conventional re active deposition epitaxy (RDE). Moreover, the growth mechanism of FeSi and Sb-related intermetallic compounds have been discussed. (C) 2000 Elsevier Science S.A. All rights reserved.