Gas-source MBE of SiC/Si using monomethylsilane

We have conducted a systematic series of gas-source MBE experiments of 3C-S iC on Si(100) using monomethylsilane (MMS), and have investigated the relat ion between growth parameters (MMS pressure and growth temperature) and the grown film quality using atomic force microscopy, X-ray diffraction, Fouri er transform infrared spectroscopy, and Auger electron spectroscopy. As a r esult, it was clarified that there exists a set of optimum growth parameter s for the best surface morphology and crystallinity. The optimum temperatur e lowered with decreasing MMS pressure, and the crystallinity of the SiC fi lm improved at the same time. In particular, a high quality 3C-SiC film on Si(100) was successfully grown at T = 900 degrees C. (C) 2000 Elsevier Scie nce S.A. All rights reserved.