Heteroepitaxial growth of SrO on hydrogen-terminated Si(100) surface

Sharp interface structure of SrO film on hydrogen-terminated Si(100) is obt ained by an alternate supply of Sr metal and O-2 gas. The hydrogen-terminat ed Si is chemically inactive, especially against oxidation. The method of a lternate supply of Sr and O-2 gas makes it possible to cover Si surface wit h the first Sr layer for prevention of formation of Si-O bonding when O-2 g as is supplied to the substrate. Epitaxial SrO films are grown when the sub strate temperature is maintained above 400 degrees C. The orientation relat ionship between epitaxial SrO and Si is found to be (100)SrO//(100)Si and [ 001]SrO//[001]Si. (C) 2000 Elsevier Science S.A. All rights reserved.