Non-equilibrium molecular orbital calculations of Si/SiO2 interfaces

Authors
Schulte, J Ushio, J Maruizumi, T
Citation
J. Schulte et al., Non-equilibrium molecular orbital calculations of Si/SiO2 interfaces, THIN SOL FI, 369(1-2), 2000, pp. 285-288
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
369
Issue
1-2
Year of publication
2000
Pages
285 - 288
Database
ISI
SICI code
0040-6090(20000703)369:1-2<285:NMOCOS>2.0.ZU;2-2
Abstract
A non-equilibrium statistical molecular orbital approach has been developed to analyze non-equilibrium configurations in Si/SiO2 heterostructures, imp rovement of which is essential for realization of superior semiconductor de vices. The non-equilibrium statistics is discussed and results obtained in conjunction with molecular orbital calculations are being presented. (C) 20 00 Published by Elsevier Science S.A. All rights reserved.