A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems

We describe the fabrication of a self-aligned epitaxially grown channel MOS FET device suitable for the strained Si/SiGe systems. This device architect ure relies on a selective epitaxy process to achieve self-alignment and con tact formation of the source and drain. It is also amenable in a convention al Si VLSI manufacturing environment. Difficulties encountered with growing high quality source/drain contacts to the channel layer were highlighted a nd a novel solution was proposed. Structural as well as electrical characte risation of the completed devices are presented. (C) 2000 Elsevier Science S.A. All rights reserved.