Optimization of breakdown behaviour and short channel effects in MBE-grownvertical MOS-devices with local channel doping

In this paper we present an approach to enhance the breakdown characteristi cs in vertical short channel metal-oxide semiconductor (MOS) devices. A pro blem of vertical devices with channel length down to 100 nm is the breakdow n, which already takes place at very low source-drain voltages. To overcome this problem we have designed a device with an intrinsic silicon region, w hich shows a significant enhancement of breakdown behaviour. Our devices sh ow a breakdown voltage up to 14 V together with distinct reduction of short channel effects. A further benefit of using the vertical concept is the em ployment of local channel doping, leading to lower power dissipation in the MOS-device. (C) 2000 Elsevier Science S.A. All rights reserved.