Citation
G. Dehlinger et al., Investigation of the emitter structure in SiGe/Si resonant tunneling structures, THIN SOL FI, 369(1-2), 2000, pp. 390-393
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090
→ ACNP
Volume
369
Issue
1-2
Year of publication
2000
Pages
390 - 393
Database
ISI
SICI code
0040-6090(20000703)369:1-2<390:IOTESI>2.0.ZU;2-H
Abstract
Pseudomorphically grown p-type Si/SiGe double barrier resonant tunneling di
odes have been investigated. The main resonances are shown to be due to tun
neling through heavy and light hole states in the well. However, temperatur
e activated resonances and resonances arising in a B-field perpendicular to
the current show the importance of the complicated emitter structure and i
ts energy spectrum. (C) 2000 Elsevier Science S.A. All rights reserved.