Light emitting SiGe/i-Si/Si : Er : O tunneling diodes prepared by molecular beam epitaxy

p(+)-SiGe/i-Si/n-Si:Er:O/n(+)-Si tunneling diodes have been processed using layer structures prepared by molecular beam epitaxy (MBE). Electroluminesc ence has been observed at room temperature from these devices at reverse bi as. The devices have been used for characterizing the optical activation of Er3+ ions in MBE Si:Er:O layers grown at different conditions. In the rang e of 400-575 degrees C, a high substrate temperature is favored for formati on of Er emission centers, but this is limited by the silicidation process occurring above 600 degrees C. Several important device parameters such as the impact excitation cross section and various EL decay processes have bee n carefully studied. A fast decay (similar to 4 mu s) due to the Auger carr ier transfer process is observed. (C) 2000 Elsevier Science S.A. All rights reserved.