Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method

In this contribution we report on the application of the sublimation molecu lar beam epitaxy (MBE) method to grow efficient light emitting Si:Er struct ures as well the extension of this method to grow waveguiding Si1-xGex laye rs. The formation processes of optically active Er centers in sublimation M BE grown materials and their properties are discussed. We distinguish the f ollowing optically effective Er centers in these materials: the oxygen-rela ted Er-1 center, specific for sublimation MBE layers, a carbon-related cent er, SiO2-precipitate like centers and a variety of oxygen-related centers w ith low symmetry. The effect of the increase of photoluminescence efficienc y in selectively doped structures, namely, in periodic multilayer Si-Si:Er/ Si structures, has been discovered. (C) 2000 Elsevier Science S.A. All righ ts reserved.