Characterization of a based h-BN thin film elaborated from the reaction between a flowing nitrogen plasma and B2H6

The reactivity of a nitrogen flowing microwave plasma is used to dissociate diborane in order to deposit a thin film of hexagonal boron nitride on a s ilicon substrate. Two reactive zones are tested : the far post-discharge an d the secondary ionized zone. FTIR, Raman and XPS studies show unambiguousl y the formation of h-Bn. But, films deposited in the first zone are not che mically stable, while films deposited in the second one, free of B(2)O(3)an d B(OH)(3) are quite stable. The influence of various durations of pre-trea tment and post-treatment by the nitrogen plasma on the ageing of the coatin g is also investigated.