Study on hot-carrier-effect for grooved-gate N-channel metal-oxide-semiconductor field-effect-transistor

In this paper,the hot-carrier effect in grooved gate NMOSFET and the device degradation induced by it were simulated using device simulator MEDICI, an d compared with those of counter conventional planar device. The hot-carrie r effect and the device degradation were explained using the distribution o f some internal physical parameters. The simulation results indicated that hot-carrier effect was strongly suppressed in grooved gate MOSFET, while gr ooved gate MOS FET's performance was sensitive to hot carrier.