Temperature effects of gamma-irradiated metal-oxide-semiconductor field-effect-transistor

Authors
Wang, JP Xu, NJ Zhang, TQ Tang, HL Liu, JL Liu, CY Yao, YJ Peng, HL He, BP Zhang, ZX
Citation
Jp. Wang et al., Temperature effects of gamma-irradiated metal-oxide-semiconductor field-effect-transistor, ACT PHY C E, 49(7), 2000, pp. 1331-1334
Citations number
9
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
49
Issue
7
Year of publication
2000
Pages
1331 - 1334
Database
ISI
SICI code
1000-3290(200007)49:7<1331:TEOGMF>2.0.ZU;2-A
Abstract
Effects of irradiation temperature are explored for metal-oxide-semiconduct or device under gamma-rays. Hardened CC4007 chips were irradiated under dif ferent temperatures,gate bias and annealing conditions. Threshold voltage s hift was divided into V-ot and V-it using mid-gap voltage method. Finally,t he mechanism of threshold shift was discussed.