Photoluminescence of erbium-doped hydrogenated amorphous SiOx(0 < x < 2)

Hydrogenated amorphous SiOx films are fabricated via plasma enhanced chemic al vapor deposition technique. After erbium implantation and rapid thermal annealing, photoluminescence (PL) are measured at 77 K and room temperature (RT), respectively. We observed the strong PL at 1.54 mu m at RT. The 1.54 mu m PL intensity changes with the variation of concentration of oxygen. T he most intense PL at 77 K in a-SiOx:H (Er) corresponds to O/Si = 1.0 and a t RT to O/Si = 1.76. Based on our results, we propose that Er ions contribu ted to PL come from O-rich region in the film. Er ions in Si-rich region ha ve no relation with FL. Temperature dependence of the intensity of the 1.54 mu m line of the Er3+ transition displays a very weak temperature quenchin g in Er-doped hydrogenated amorphous Si. The PL intensity at 250 K is a lit tle more one half of that at 15 K.