A composite oxide material Gd3Ga5O12:Ag was prepared by solid state reactio
n. The composition and the crystallinity of phosphor were determined by X-r
ay diffraction. The thin film electroluminescence (EL) devices based on Gd3
Ga5 O-12:Ag were prepared by electron beam evaporation. We have obtained a
good UV-blue EL emission with a peak at 397 nm and a shoulder at 467 nm. Th
e EL peaks located at 397 and 467 nm are found to originate from the oxide
vacancies and 4d(9)5s(0) to 4d(10) of Ag+, respectively.