Structural, electrical and thermoelectrical properties of (Bi1-xSbx)(2)Te-3 thin films grown by MOCVD process

The electrical and thermoelectrical performance of p-type (Bi1-xSbx)(2)Te-3 obtained by metal organic chemical vapour deposition (MOCVD) in a horizont al quartz reactor on pyrex substrate are discussed. The quality of the depo sited layers was checked by X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Hall effect and resi stivity measurements were performed. It was found that the electrical prope rties of (Bi1-xSbx)(2)Te-3 thin films depend strongly on the growth paramet ers. The measurement of the Seebeck coefficient (S = 235 mu V/K) lead us to confirm the significant potential of the MOCVD method to produce a materia l with a good potential for thermoelectric applications.