Electric field-induced layer deformations in the subphases of an antiferroelectric liquid crystal device

Citation
Ls. Matkin et al., Electric field-induced layer deformations in the subphases of an antiferroelectric liquid crystal device, APPL PHYS L, 77(3), 2000, pp. 340-342
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
3
Year of publication
2000
Pages
340 - 342
Database
ISI
SICI code
0003-6951(20000717)77:3<340:EFLDIT>2.0.ZU;2-V
Abstract
The layer structure in the antiferroelectric, ferrielectric, and ferroelect ric phases of a liquid crystal device is reported, together with its electr ic field-induced deformation. The field-free chevron angle is comparable to the steric tilt angle, but differs significantly from the optical tilt ang le. A sharp field threshold is observed for the chevron to bookshelf transi tion in the antiferroelectric phase at 1.3 V/mu m, while layer deformations occur at much lower fields (0.3 V/mu m) in the other subphases. Models are proposed for the layer deformations. (C) 2000 American Institute of Physic s. [S0003-6951(00)00129-7].