Molecular-dynamics study of the mechanism and kinetics of void growth in ductile metallic thin films

Citation
Mr. Gungor et al., Molecular-dynamics study of the mechanism and kinetics of void growth in ductile metallic thin films, APPL PHYS L, 77(3), 2000, pp. 343-345
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
3
Year of publication
2000
Pages
343 - 345
Database
ISI
SICI code
0003-6951(20000717)77:3<343:MSOTMA>2.0.ZU;2-K
Abstract
A molecular-dynamics study is presented of the mechanism and kinetics of vo id growth and morphological evolution in ductile metallic thin films subjec t to biaxial tensile strains. The void becomes faceted, grows, and relieves strain by emission from its surface of pairs of screw dislocations with op posite Burgers vectors. Repeated dislocation generation and propagation lea ds to formation of a step pattern on the film's surfaces. A simple phenomen ological kinetic model of void growth is derived. Such kinetic equations ca n be used to formulate constitutive theories of plastic deformation for con tinuum-scale modeling of void evolution. (C) 2000 American Institute of Phy sics. [S0003-6951(00)00729-4].