Interdiffusion in NiFe/Cu/NiFe trilayers: Possible failure mechanism for magnetoelectronic devices

Authors
Bruckner, W Baunack, S Hecker, M Monch, JI van Loyen, L Schneider, CM
Citation
W. Bruckner et al., Interdiffusion in NiFe/Cu/NiFe trilayers: Possible failure mechanism for magnetoelectronic devices, APPL PHYS L, 77(3), 2000, pp. 358-360
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
3
Year of publication
2000
Pages
358 - 360
Database
ISI
SICI code
0003-6951(20000717)77:3<358:IINTPF>2.0.ZU;2-T
Abstract
The evolution of electrical resistance, stress, and microstructure during a nnealing has been studied on 100 nm NiFe(20 wt %)/200 nm Cu/100 nm NiFe tri layers. Irreversible resistance changes and the concentration-depth profile s show that, at and above 200 degrees C, diffusion of Ni into Cu as well as of Cu into NiFe occurs. The interdiffusion is held for an important failur e mechanism of Cu/NiFe-based magnetoelectronic system at elevated temperatu res. (C) 2000 American Institute of Physics. [S0003-6951(00)03129-6].