Statistical analysis of near-field photoluminescence spectra of single ultrathin layers of CdSe/ZnSe

Authors
von Freymann, G Kurtz, E Klingshirn, C Wegener, M
Citation
G. Von Freymann et al., Statistical analysis of near-field photoluminescence spectra of single ultrathin layers of CdSe/ZnSe, APPL PHYS L, 77(3), 2000, pp. 394-396
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
3
Year of publication
2000
Pages
394 - 396
Database
ISI
SICI code
0003-6951(20000717)77:3<394:SAONPS>2.0.ZU;2-D
Abstract
The statistical analysis of thousands of near-field photoluminescence spect ra of single ultrathin CdSe layers at 20 K exhibits a strong positive corre lation peak around 20 meV energy with a width of 5 meV. Our data are consis tent with individual spectra which consist of sets of many pairs of lines. In each pair, the two lines must have comparable strength. We speculate abo ut the origin of these pairs. (C) 2000 American Institute of Physics. [S000 3-6951(00)03229-0].