Room temperature InAsSb photovoltaic midinfrared detector

An InAs0.91Sb0.09 p-i-n photovoltaic midinfrared detector grown by molecula r beam epitaxy and operating at room temperature is presented. An R(0)A of 1.05 Ohm cm(2) at 250 K and 0.12 Ohm cm(2) at 295 K has been achieved, resu lting in a detectivity of 4.5 x 10(9) cm root<(Hz)over bar>/W at 3.39 mu m and 250 K. The quality of the active region material ensures a sufficiently low generation-recombination current. Room temperature performances are li mited by the diffusion of holes from the active region through the confinin g barriers. (C) 2000 American Institute of Physics. [S0003-6951(00)04429-6] .