Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen

Electron and hole transport in compensated InGaAsN (approximate to 2% N) ar e examined through Hall mobility, photoconductivity, and solar cell photore sponse measurements. Short minority carrier diffusion lengths, photoconduct ive-response spectra, and doping dependent, thermally activated Hall mobili ties reveal a broad distribution of localized states. At this stage of deve lopment, lateral carrier transport appears to be limited by large scale (mu ch greater than mean free path) material inhomogeneities, not a random allo y-induced mobility edge. (C) 2000 American Institute of Physics. [S0003-695 1(00)04629-5].