Improved thermal stability of GaN{0001} surfaces by adsorbed C-60 molecules

Citation
H. Nienhaus et al., Improved thermal stability of GaN{0001} surfaces by adsorbed C-60 molecules, APPL PHYS L, 77(3), 2000, pp. 403-405
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
3
Year of publication
2000
Pages
403 - 405
Database
ISI
SICI code
0003-6951(20000717)77:3<403:ITSOGS>2.0.ZU;2-W
Abstract
Adsorption and desorption of C-60 molecules on GaN{0001}-1x1 surfaces as we ll as the surface decomposition by heating were investigated with Auger ele ctron spectroscopy. The first monolayer of C-60 forms strong chemical bonds to the substrate atoms. A seven-step annealing procedure at temperatures u p to 1275 K is presented which completely removes the adsorbed carbon witho ut decomposing the surface. If the process is applied to clean, uncovered G aN{0001}-1x1 surfaces thermal etching with a significant Ga atom loss is ob served. The results indicate that adsorbed C-60 increases the thermal stabi lity of the surfaces considerably and that thermal etching begins at defect s or steps at the surface where the molecules are most strongly bound. (C) 2000 American Institute of Physics. [S0003-6951(00)04829-4].