CYCLOTRON-RESONANCE MEASUREMENTS ON NARROW-GAP SEMICONDUCTORS IN MEGAGAUSS FIELDS

Authors
PORTUGALL O MIURA N BAUER G SCHONFELD R VONORTENBERG M
Citation
O. Portugall et al., CYCLOTRON-RESONANCE MEASUREMENTS ON NARROW-GAP SEMICONDUCTORS IN MEGAGAUSS FIELDS, Physica. B, Condensed matter, 201, 1994, pp. 280-283
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
201
Year of publication
1994
Pages
280 - 283
Database
ISI
SICI code
0921-4526(1994)201:<280:CMONSI>2.0.ZU;2-Z
Abstract
Two examples for the characterization of narrow gap semiconductors by means of infrared transmission measurements in magnetic fields up to 1 50 T are presented. The pronounced multiline spectra observed in epita xially grown HgSe are attributed to spin-split cyclotron resonances in different charge carrier subsystems. In PbSe the cyclotron resonances of different valleys of the same charge carrier system are observed a nd related to fundamental bandstructure properties.