Investigations of semiconductor surfaces and interfaces by X-ray grazing incidence diffraction

Non-coplanar X-ray grazing incidence diffraction is an appropriate method t o investigate the strain and compositional set-up of semiconductor nanostru ctures, Exploiting refraction effects at the air-sample interface, the pene tration depth of the probing X-ray can by tailored between a few and severa l hundred nanometers below the surface. While the detected signal is Bragg- diffracted at a lattice plane directed perpendicular to the surface, the me thod possesses the capability for a depth-resolved analysis of the relaxati on state in semiconductor multilayers. Beside vertically stacked structures , it can be applied for the investigation of laterally patterned nanostruct ures, such as free-standing and buried surface gratings. This article will introduce the reader to the experimental set-up, the resolution condition, and theoretical approaches necessary for running and interpreting GID-exper iments, followed by a brief review of recent applications.